Fdb8880 datasheet

Datasheet

Fdb8880 datasheet

Explore Discrete Semiconductors on Octopart: the fastest source for datasheets pricing, specs availability. Fdb8880 datasheet. 11 FDP8880 / FDB8880 Rev. Log fdb8880 into MyON to proceed. pdf Size: 696K datasheet _ fairchild_ semi. 5m, VGS 40A r DS( ON) = 11. PCN Design/ Specification: Logo 17/ Aug/. Fairchild Semiconductor Corporation FDP8880 / FDB8880 Rev.

Datasheet: FDP8880- D. ON Semiconductor FDB8880: 2, 394 available from 9 distributors. tmM FDP8880 / FDB8880 N- Channel PowerTrench MOSFET 30V 54A 11. FDB8880 datasheet fdb8880 integrated circuits, FDB8880 data sheet : FAIRCHILD - N- Channel PowerTrench MOSFET, alldatasheet, datasheet, , triacs, Datasheet search site for Electronic Components , Semiconductors, diodes, FDB8880 circuit other fdb8880 semiconductors. 57E- 1 datasheet circuit , cross reference application notes in pdf format.
Offer fdb8880 FDB8880- NL FAIRCHILD from Kynix Semiconductor Hong Kong Limited. 0 M ) VDGR 60 Vdc Gate− Source Voltage − Continuous − Non− repetitive ( tp ≤ 50 s. Offer FDB8880 FAICHILD from Kynix Semiconductor Hong Kong Limited. PCN Packaging: Tape and Box/ Reel Barcode Update 07/ Aug/ Mult. com FDP8880 / FDB8880 N- Channel PowerTrench® MOSFET TRADEMARKS Download PDF. FDB8880 Datasheet ( PDF) 1. N- Channel 30V 11A ( Ta), 54A ( Tc) 55W ( Tc) Surface Mount fdb8880 TO- 263AB. 6m VGS = 40A High performance trench technology for extremely low r DS( ON) Low gate charge High power current handling capability. Datasheets: FDB8880, FDP8880 TO220B03 Pkg Drawing. FDB8880 N- channel Powertrench Mosfet. fairchildsemicom FDP8880 / FDB8880 2 MOSFET Maximum Ratings TC = 25° C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Electrical Characteristics TC = 25° C unless otherwise noted Off Characteristics On Characteristics Symbol fdb8880 Parameter Ratings Units VDSS Drain to Source. Home > Products > Discrete > IGBTs & FETs > MOSFETs > FDB8880. A ( 512kB) Product Overview » View Reliability Data ». FDB8880 Transistor Equivalent Substitute - MOSFET Cross- Reference Search. 2N7000/ D 2N7000G Small Signal MOSFET 200 mAmps, 60 Volts datasheet N− Channel TO− 92 Features • AEC Qualified • PPAP Capable • This is a Pb− Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain− fdb8880 Gate Voltage ( RGS = 1. FETs - Single MOSFET N- CH 30V 54A TO- 263AB.
fairchildsemicom FDP8880 / FDB8880 1 FDP8880 / FDB8880 N- Channel PowerTrench® MOSFET datasheet 30V fdb8880 54A 11. The document you are trying to download is gated.


Datasheet

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fdb8880 datasheet

FDB8880, produced by Fairchild/ ON Semiconductor, is a N- Channel MOSFET transistor in D2PAK ( TO- 263AB) SMD ( SMT) package. The features include 30V drain- source breakdown voltage, 11A ( Ta), 54A ( Tc) continuous drain current at 25° C, 2. 5V @ 250μA gate- source threshold voltage.